Optique : Collection de la Société Française d'Optique (SFO)
Éditeur : EDP Sciences
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Semiconductor lasers and integrated devices. ( P. Brosson)
Cours rédigé. 53 pages. Fichier pdf (920 Ko).
DOI : 10.1051/bib-sfo:2002059
Première mise en ligne : 10/04/2002.
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 accès gratuit
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Résumé. A semiconductor laser is a very compact light source (0.2 mm long) in which electric current (a few mA) is converted into coherent optical power with high efficiency. In 1970, the successful Continuous Wave (CW) operation by Hayashi at Bell Labs and by Alferov at the Ioffe Institute of the Double-Heterostructure laser at room temperature coincided with the achievement of low loss (1 dB/km) optical fiber. These high improvements of both laser and optical fiber have motivated a strong excitement worldwide. Today, high performances, and reliable semiconductor lasers are available for commercial high bit rate lightwave communication systems. Their Mean Time To Failure (MTTF) is 100 years, a tremendous improvement compared with 100~hours lifetime in 1972!
A wide range of new different types of semiconductor integrated photonic components, derived from the semiconductor laser, have been demonstrated in lightwave communication systems. They include integrated modulator (electro-absorption, Mach-Zehnder), tunable laser, Semiconductor Optical Amplifier (SOA), wavelength converter, Transmitter-Receiver Device (TRD), Vertical Cavity Surface Emitting Laser (VCSEL), demultiplexer, semiconductor laser pump source for Erbium Doped Fiber Amplifier... These integrated devices are under investigation at OPTO+ with already very exciting performances, or commercially available at Alcatel Optronics.
Plan
- 1. Introduction
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2. Integrated Laser electro-absorption Modulator (ILM)
2.1. Introduction
2.2. The discrete electro-absorption (E/A) modulator
2.3. The Integrated Laser E/A Modulator
2.3.1. Modes and laser threshold of the ILM
2.3.2. Dynamic response of the ILM
2.4 Conclusion
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3. Integrated Laser Mach-Zehnder Modulator (ILMZ)
3.1 Introduction
3.2 The discrete Mach-Zehnder interferometer modulator
3.3 The Integrated Laser Mach-Zehnder modulator (ILMZ)
3.3.1. Introduction
3.3.2. Modes and laser threshold of the ILMZ
3.3.3. Dynamic response of the ILMZ
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4. Semiconductor Optical Amplifier (SOA)
4.1 Introduction
4.2 Principle of operation
4.3. The Gain Clamped SOA
4.3.1. Why a Gain Clamped SOA ?
4.3.2. Principle of operation of the Gain Clamped SOA
4.4 The 4-gate SOA array
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5. Wavelenght Converter
5.1. Introduction
5.2. All-optical wavelenght converters
5.2.1. Bistable Distributed Bragg Reflector (DBR) laser
5.2.2. Carrier depletion in the gain section of a Distributed Bragg Reflector (DBR) laser
5.2.3. Gain saturation in a semiconductor Optical Amplifier (SOA)
5.2.4. Semiconductor Optical Amplifier (SOA) in a Mach-Zehnder interferometer
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6. Wavelenght DeMultiplexer
6.1. Introduction
6.2 Wavelenght Demultiplexer operating principle
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7. Wavelenght selector
7.1. Introduction
7.2. Wavelenght Selector operating principle
7.3. Wavelenght Selector structure and characteristics
7.4. System performances
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8. Transmitter Receiver Device (TRD)
8.1. Introduction
8.2. The integrated Transmitter Receiver Device
8.3. System performances
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9. Source for Wavelenght Division Multiplexing (WDM)
9.1. Introduction
9.2. Wavelenght Division Multiplexing
9.3. Lasers with fixed wavelenght, laser arrays, low cost lasers
9.4. Tunable lasers
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